BST Capacitor Thin Films
![No Thumbnail [100%x80]](data:image/svg+xml;base64,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)
Date
2010-05-14Metadata
Show full item recordAbstract
Ferroelectric Ba0.5Sr-0.5TiO3 (BST) thin film are well known as dielectric materials. They been used as capasitor and high density dynamic random access memory (DRAM) due to their high dielectric constant and high capacity of charge storage and ferroelectric device.