BST Capacitor Thin Films

dc.contributor.author	Nurjuliana, Juhari
dc.contributor.author	Nur Syakimah, Ismail
dc.contributor.author	Nor Zahiyah, Nordin
dc.date.accessioned	2010-07-14T04:01:29Z
dc.date.available	2010-07-14T04:01:29Z
dc.date.issued	2010-05-14
dc.identifier.uri	http://dspace.unimap.edu.my/123456789/8280
dc.description	Nurjuliana and her team won gold at 21st International Invention, Innovation and Technology Exhibition (ITEX) 2010, 14th - 16th May 2010 at Kuala Lumpur Convention Centre (KLCC), Kuala Lumpur, Malaysia.	en_US
dc.description.abstract	Ferroelectric Ba0.5Sr-0.5TiO3 (BST) thin film are well known as dielectric materials. They been used as capasitor and high density dynamic random access memory (DRAM) due to their high dielectric constant and high capacity of charge storage and ferroelectric device.	en_US
dc.language.iso	en	en_US
dc.publisher	Malaysian Invention and Design Society (MINDS)	en_US
dc.relation.ispartofseries	21st International Invention, Innovation and Technology Exhibition (ITEX) 2010	en_US
dc.subject	BST thin films	en_US
dc.subject	Capacitor	en_US
dc.subject	UniMAP -- Exhibition	en_US
dc.subject	UniMAP -- Research and development	en_US
dc.subject	International Invention, Innovation and Technology Exhibition 2010	en_US
dc.subject	ITEX 2010	en_US
dc.title	BST Capacitor Thin Films	en_US
dc.type	Image	en_US
dc.contributor.url	nurjuliana@unimap.edu.my	en_US