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dc.contributor.authorMd. Abdullah, Al Humayun
dc.contributor.authorMohd Abdur Rashid, Dr.
dc.contributor.authorMohd Fareq, Abd. Malek, Dr.
dc.contributor.authorAdawati, Yusof
dc.contributor.authorFarrah Salwani, Abdullah
dc.contributor.authorNor Baizura, Ahmad
dc.date.accessioned2014-03-28T08:41:57Z
dc.date.available2014-03-28T08:41:57Z
dc.date.issued2013
dc.identifier.citationAdvanced Materials Research, vol. 701, 2013, pages 188-191en_US
dc.identifier.isbn978-303785704-5
dc.identifier.issn1022-6680
dc.identifier.urihttp://www.scientific.net/AMR.701.188
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/33191
dc.descriptionLink to publisher's homepage at http://www.ttp.net/en_US
dc.description.abstractThis paper presents a comparative analysis of the characteristics of confined carrier concentration in the gain medium as well as the carrier concentration at the threshold. We have studied extensively these phenomena by using In x Ga1-x N based quantum well and InxGa1-x N based quantum dot in the active layer of the laser structure. The numerical results obtained are compared to investigate the superiority of the quantum dot over quantum well. It is ascertained from the comparison results that InxGa1-xN based quantum dot provides higher density of confined carrier and lower level of carrier concentration required for lasing action. This paper reports the enhancement of confined carrier density and minimization of carrier concentration at threshol of laser using InxGa1-xN based quantum dot as the active layer material. Hence, it is revealed that better performances of lasers have been demonstrated using InxGa1-xN based quantum dot than that of quantum well in the active medium of the device structure.en_US
dc.language.isoenen_US
dc.publisherTrans Tech Publicationsen_US
dc.subjectActive layer thicknessen_US
dc.subjectInxGa1-xNen_US
dc.subjectQuantum doten_US
dc.subjectQuantum wellen_US
dc.titleA comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layeren_US
dc.typeArticleen_US
dc.contributor.urlhumayun0403063@gmail.comen_US
dc.contributor.urlabdurrashid@unimap.edu.myen_US
dc.contributor.urlmfareq@unimap.edu.myen_US
dc.contributor.urladawati@unimap.edu.myen_US
dc.contributor.urlfarrahsalwani@unimap.edu.myen_US
dc.contributor.urlbaizura@unimap.edu.myen_US


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