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dc.contributor.authorSaini, Hardev S.
dc.contributor.authorSingh, Mukhtiyar
dc.contributor.authorAli Hussain, Reshak, Prof. Dr.
dc.contributor.authorKashyap, Manish K.
dc.date.accessioned2014-03-11T04:06:02Z
dc.date.available2014-03-11T04:06:02Z
dc.date.issued2013-04
dc.identifier.citationJournal of Magnetism and Magnetic Materials, vol.331, 2013, pages 1-6en_US
dc.identifier.issn0304-8853
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32497
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractThe electronic and magnetic properties of Cr-doped Cd-Chalcogenides, Cd₁₋xCrxZ (Z=S, Se and Te) for dopant concentration, x=0.25 and 0.125 are presented in order to search new Dilute Magnetic Semiconductor (DMS) compounds suitable for spintronic applications. The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange–correlation (XC) potential. The calculated results show that the doping of Cr atom induces ferromagnetism in these compounds. Moreover, all DMS compounds retain half metallicity at both dopant concentrations with 100% spin polarization at Fermi level (EF). The total magnetic moments of these compounds are mainly due to Cr-d states present at EF where as there exist small induced magnetic moments on other non-magnetic atoms as well.en_US
dc.language.isoenen_US
dc.publisherElsevier (Imprint: NORTH-HOLLAND)en_US
dc.subjectBand structureen_US
dc.subjectDFTen_US
dc.subjectFPLAPW methoden_US
dc.subjectSpintronicsen_US
dc.subjectDMSen_US
dc.titleVariation of half metallicity and magnetism of Cd₁₋xCrxZ (Z=S, Se and Te) DMS compounds on reducing dilute limiten_US
dc.typeArticleen_US
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0304885312008669
dc.identifier.urlhttp://dx.doi.org/10.1016/j.jmmm.2012.10.044
dc.contributor.urlmanishdft@gmail.comen_US


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