| dc.contributor.author | Yarub, Al-Douri, Prof. Dr. | |
| dc.date.accessioned | 2013-07-23T07:36:46Z | |
| dc.date.available | 2013-07-23T07:36:46Z | |
| dc.date.issued | 2012-11-20 | |
| dc.identifier.citation | p. 169-172 | en_US |
| dc.identifier.uri | http://dspace.unimap.edu.my/123456789/27000 | |
| dc.description | Malaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012 organised by technical universities under the Malaysian Technical Universities Network (MTUN), 20th - 21st November 2012 at Hotel Seri Malaysia, Kangar, Perlis. | en_US |
| dc.description.abstract | Electrochemical deposition method is used to prepare GaN nanostructure. The morphological studies using scanning electron microscopy (SEM), photoluminescence (PL) the refractive index and optical dielectric constant are investigated experimentally and theoretically, respectively. These investigations are found to be dependent on the growth time. The nanosize effect is noticed for UV detectors applications. The calculated results are in agreement with experimental and theoretical data. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Malaysian Technical Universities Network (MTUN) | en_US |
| dc.relation.ispartofseries | Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012 | en_US |
| dc.subject | Electrochemical | en_US |
| dc.subject | GaN nanostructure | en_US |
| dc.subject | Photoluminescence (PL) | en_US |
| dc.title | Optical properties of GaN nanostructures for optoelectronic applications | en_US |
| dc.type | Working Paper | en_US |
| dc.contributor.url | yarub@unimap.edu.my | en_US |
