Browsing School of Materials Engineering (Articles) by Author "Kashyap, Manish K."
Now showing items 1-6 of 6
-
Accounting oxygen vacancy for half-metallicity and magnetism in Fe-doped CeO2 dilute magnetic oxide
Saini, Hardev S.; Singh, Mukhtiyar P.; Ali Hussain, Reshak, Prof. Dr.; Kashyap, Manish K. (Elsevier B.V., 2013)The present work explores the electronic and magnetic properties of Ce 1-xFexO2 (x = 0.125 and 0.06) with and without oxygen vacancies by full potential linear augmented plane wave method (FPLAPW) based on density functional ... -
Disorder dependent half-metallicity in Mn2CoSi inverse Heusler alloy
Singh, Mukhtiyar P.; Saini, Hardev S.; Thakur, Jyoti; Ali Hussain, Reshak, Prof. Dr.; Kashyap, Manish K. (Elsevier Ltd., 2013)Heusler alloys based thin-films often exhibit a degree of atomic disorder which leads to the lowering of spin polarization in spintronic devices. We present ab-initio calculations of atomic disorder effects on spin ... -
Effect of cation substitution on electronic band structure of ZnGeAs 2 pnictides: A mBJLDA approach
Saini, Hardev S.; Singh, Mukhtiyar P.; Ali Hussain, Reshak, Prof. Dr.; Kashyap, Manish K. (Elsevier B.V., 2012-03)The electronic properties of ABAs 2 (A = Zn, Cd; B = Ge, Sn) compounds have been investigated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method with an aim to study the effect ... -
Electronic structure, magnetism and robust half-metallicity of new quaternary Heusler alloy FeCrMnSb
Singh, Mukhtiyar P.; Saini, Hardev S.; Ali Hussain, Reshak, Prof. Dr.; Kashyap, Manish K. (Elsevier B.V., 2013)A new quaternary Heusler alloy FeCrMnSb is identified by employing ab initio electronic structure calculations. It is stable in Y-structure which is also verified by various conditions governed by elastic constants c ij. ... -
Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit
Saini, Hardev S.; Singh, Mukhtiyar P.; Ali Hussain, Reshak, Prof. Dr.; Kashyap, Manish K. (Elsevier B.V., 2012-09)The electronic and magnetic properties of Ga 1- xCr xP dilute magnetic semiconductor (DMS) compound for dopant concentration, x = 0.25, 0.125, 0.06 and 0.03 have been investigated using WIEN2k implementation of full potential ... -
Variation of half metallicity and magnetism of Cd₁₋xCrxZ (Z=S, Se and Te) DMS compounds on reducing dilute limit
Saini, Hardev S.; Singh, Mukhtiyar; Ali Hussain, Reshak, Prof. Dr.; Kashyap, Manish K. (Elsevier (Imprint: NORTH-HOLLAND), 2013-04)The electronic and magnetic properties of Cr-doped Cd-Chalcogenides, Cd₁₋xCrxZ (Z=S, Se and Te) for dopant concentration, x=0.25 and 0.125 are presented in order to search new Dilute Magnetic Semiconductor (DMS) compounds ...