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Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
(Universiti Malaysia Perlis, 2010-06-09)
10%-N2O nitrided SiO2 gate on n-type 4H SiC has been used to investigate macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through the oxide. Non-contact mode atomic force microscope ...