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XRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloys
(Universiti Malaysia Perlis, 2010-06-09)
We present the structural properties
of ternary InxGa1-xN (0.20 x 0.80) alloys
grown on sapphire substrate by plasma-assisted
molecular beam epitaxy. High resolution X-ray
diffraction (HR-XRD) analyses were used ...