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    • Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique 

      C. G., Ching; S. S., Ng; Z., Hassan; H., Abu Hassan (Universiti Malaysia PerlisSchool of Materials Engineering & School of Environmental Engineering, 2010-06-09)
      Epitaxial growth of GaN has become an interest topic in term of light emitting device fabrication. Most of the commercial GaN based device is normally grown on sapphire substrate. For power device application, SiC has been ...