Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM

Abstract

A study of aspect ratio performance on silicon oxide is developing to predict the oxide profile on surface of wafer. The main focus of this project is to perform and produce a high profile of silicon oxide under profiler meter, Atomic Force Microscopy (AFM) and Scanning Electron Microscope (SEM) but it is not easy to achieve the result as a desired patterns. Initially, this project was based on UV exposed lithography method and wet etching technique. Next, the process flow of developments was consisting of the parameter and recipes also discuss in detail. The positive resist is used as a mask during silicon oxide etching process. These oxide layers were etched by using wet etching technique. The rational used this techniques is because it widely used for the patterns size larger then 3µm. Buffered Oxide Etch (BOE) is use to remove the areas of silicon oxide unprotected by photoresist and exposed the silicon underneath. In order to produce a high aspect ratio silicon oxide profile and size reduction by thermal oxidation was investigated between compared the result among the different time etch and temperature. Finally, all the works and data results regarding from patterning process until characterization of silicon oxide profile was recorded in this project.