Browsing Uda Hashim, Prof. Ts. Dr. by Subject "Transistors"
Now showing items 1-6 of 6
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Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
(Institute of Electrical and Electronics Engineering (IEEE), 2006)One of the great problems in current large-scale integrated circuits (LSIs) is increasing power dissipation in a small silicon chip. Single-electron transistor (SET) which operate by means of one-by-one electron transfer, ... -
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ... -
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ... -
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication
(Springer New York, 2007-12)We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ... -
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ... -
SOI Single-Electron Transistors (SET) design and process development
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)Single-electron transistor (SET) is attractive devices to use for large-scale integration. SET can be made very small, dissipate little power, and can measure quantities of charge much faster than MOSFETs. This makes SET ...