Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide

Abstract

Ferroelectric Barium Strontium Titanate (BST) and doped with Indium (BIST) thin films are deposited using spin coating technique with spinning speed at 4000 rpm for 30 seconds. The percentage of Indium is varied with 2% and 10%. The post deposition annealing of the films are carried out at different temperature namely 700°C, 850°C and 950°C for a period of one day. At annealing temperature of 850°C for BIST 2% and 10% indicates that the current gives highest value when the forward bias voltage is applied for IV characteristics. Combination with lowest dopant concentration made BIST 2% can be classified into light dependent device. CV measurement for BIST 10% gives the higher result of capacitance value.