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    Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD 

    Arsyad, F. S.; Subagio, A.; Sutanto, H.; Arifin, P.; Budiman, M.; Barmawi, M.; Husien, I.; Zul Azhar, Zahid Jamal (Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
    Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...

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    AuthorArifin, P. (1)Arsyad, F. S. (1)Barmawi, M. (1)Budiman, M. (1)Husien, I. (1)... View MoreSubject[(C2H5)4]Si (1)
    Aluminium compounds (1)
    Atomic force microscopy (1)Deposition (1)GaN Quantum Dot (1)... View MoreDate Issued2006 (1)

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