Search
Now showing items 1-4 of 4
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
(Elsevier B.V., 2007-05)
The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
Mask Making Process (Positive and Negative Mask)
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
Generally, two types of masks are used in MOSFET fabrication; positive mask and negative mask. These resists mask can be used either in lift off process or conventional lithography step depends on the fabrication process ...
Quantum Dot Single Electron Transistor Structure Formation Using E-Beam Lithography
(C. I. S. Network, 2007-05-18)
To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.
Quantum Dot Single Electron Transistor: Design and Fabrication
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.