Browsing Zul Azhar Zahid Jamal, Dato' Prof. Dr. by Author "uda@unimap.edu.my"

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    • Mask Making Process (Positive and Negative Mask) 

      Uda, Hashim, Prof. Dr.; Nur Hamidah, Abdul Halim; Mohamad Nuzaihan, Md Nor; Zul Azhar, Zahid Jamal, Prof. Dr. (Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
      Generally, two types of masks are used in MOSFET fabrication; positive mask and negative mask. These resists mask can be used either in lift off process or conventional lithography step depends on the fabrication process ...

    • MOS Transistor (Fabricated Using In-House Low Cost Facilities) 

      Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr.; Nur Hamidah, Abdul Halim; Mohammadd Nuzaihan, Mohd Nor; Mohd Sallehudin, Saad; Phang, Keng Chew; Haffiz, Abd Razak; Bahari, Man (Malaysian Invention & Design Society (MINDS), 2006-05-19)
      MOS Transistor is divided into two types: NMOS and PMOS. Majority carrier od NMOS is electrons whereby PMOS is holes. The MOS transistor consists of three regions namely source, drain and gate. Fabrication of MOS transistor ...

    • Quantum Dot Single Electron Transistor Structure Formation Using E-Beam Lithography 

      Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr.; Samsudi, Sakrani, Prof. Dr.; Sutikno, Madnarski (C. I. S. Network, 2007-05-18)
      To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.

    • Quantum Dot Single Electron Transistor: Design and Fabrication 

      Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr.; Samsudi, Sakrani, Prof. Dr.; Madnarski, Sutikno (Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
      To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.