Browsing Journal Articles by Subject "Thermal annealing"
Now showing items 1-2 of 2
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GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
(Elsevier B.V., 2009-07)In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ... -
A review on the label free nanowire based biosensor
(AENSI Publications, 2012)Advancement in nanotechnologies has encourage researchers to conduct studies related to nanowires formation. Studies regarding the types of nanowire based biosensors have been conducted and reported in this papers. Methods ...