Now showing items 1-8 of 8

    • Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography 

      Uda, Hashim; Sutikno, Madnasri; Zul Azhar, Zahid Jamal (Nano Science and Technology Institute, 2007)
      Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...
    • Development of a PMV-based thermal comfort modelling 

      Shazmin Aniza, Abdul Shukor; Karl Kohlhof; Zul Azhar, Zahid Jamal (International Association of Science and Technology for Development (IASTED)/ACTA Press, 2007-05)
      This paper concentrates on the modelling development for a PMV-based thermal comfort system. Operators can define their own expression towards the surroundings by inserting the respective value of PMV and the system will ...
    • Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process 

      Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (IOP Publishing Ltd, 2008-01-29)
      The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ...
    • Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD 

      Arsyad, F. S.; Subagio, A.; Sutanto, H.; Arifin, P.; Budiman, M.; Barmawi, M.; Husien, I.; Zul Azhar, Zahid Jamal (Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
      Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...
    • Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication 

      Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (Springer New York, 2007-12)
      We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ...
    • Nano-silver microcavity enhanced UV GaN light emitter 

      Naser Mahmoud, Ahmed; Zaliman, Sauli; Uda, Hashim; Zul Azhar, Zahid Jamal (Inderscience Enterprises Limited, 2009)
      We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ...
    • Surface plasmon resonance sensor sensitivity enhancement using gold-dielectric material 

      Fouad, S.; Naseer, Sabri; Zul Azhar, Zahid Jamal; Prabakaran, Poopalan (Universiti Malaysia Perlis (UniMAP), 2017)
      There has been increasing interest in the field of surface plasmon resonance sensing technology according to its advantages such as the small amount of sensing samples required, freedom of electromagnetic interference ...
    • A systematic dry etching process for profile control of quantum dots and nanoconstrictions 

      Madnarski, Sutikno; Uda, Hashim; Zul Azhar, Zahid Jamal (Elsevier B.V., 2007-08)
      In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. ...