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Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia Perlis, 2008-04)
This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia Perlis, 2008-03)
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic
structure. The diffusion process is a method to control ...
Improvement of SiGe HBT Design and Technology Performance using Device Simulation
(Universiti Malaysia Perlis, 2007-04)
Simulation of the effect of various design parameters on the performance of the HBT is
essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. ...
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
(Universiti Malaysia Perlis, 2008-04)
Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic ...
Optimization of Nitride deposition process using Taguchi method
(Universiti Malaysia Perlis, 2008-04)
The process of plasma enhanced chemical vapor deposition silicon nitride film which is used as barrier layer for the doped oxide in premetal dielectric (PMD) application and optimized using Design of Experiment (DOE) ...
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia Perlis, 2008-03)
Many experiments on the mechanics of nanostructures require the creation of rigid
clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ...