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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation
(Universiti Malaysia Perlis, 2008-04)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. In this project, ...
Simulation, fabrication and electrical characterization of p-Si capacitor design structure
(Universiti Malaysia Perlis, 2008-03)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the ...
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
(Universiti Malaysia Perlis, 2008-04)
A simulation for forming shallow trench isolation (STI) in the integrated circuit
(IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ...