Browsing School of Microelectronic Engineering (FYP) by Title
Now showing items 123-142 of 153
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Stable 2 Stage CMOS Amplifier
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)In the last few years there has been an effort to integrate electrochemical instrumentation. A critical component of such a system is an amplifier. These projects design a “Stable Two stage CMOS amplifier”. This is achieved ... -
Study and design Infrared Beacon for the blind
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Mobility for the blind is always a great problem. They always need assistance from people around to move to the place that they want to. The present method like a walking stick is effective but restricted them from moving ... -
Study and Design the Current Mirror using Bulk-Driven Technique for Low Voltage Analog
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Current Mirrors are core structure for almost all analog and mixed mode circuits and the performance of analog structures largely depends on the characteristic. In this design, the design presents some of the low voltage ... -
Study and improvement of UniMAP Air Shower Room
(Universiti Malaysia Perlis, 2008-04)This Air Shower Room is a project that will be used to control air quality especially to all industry and all semiconductor factory. The air blower which is play a main function will absorb the dust and dirt from the ... -
Study in Design of 32 X 4Bit Static Random Access Memory (SRAM)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Study in design Static Random Access Memory (SRAM) using Mentor Graphic and simulation process with Eldo simulator. The research made on the operation of six transistors, its advantage over Dynamic Random Access Memory ... -
Study of acceleratin voltage influence the Conical structure during Electron Beam Induced Deposition (EBID)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Electron beam induced deposition (EBID) is a well established technique for highresolution direct material deposition from the gas phase onto a substrate. A finely focused electron beam of a scanning electron microscope ... -
Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)A study of aspect ratio performance on silicon oxide is developing to predict the oxide profile on surface of wafer. The main focus of this project is to perform and produce a high profile of silicon oxide under profiler ... -
Study of Deposition Time Influence the Conical Structure during Electron Beam Induced Deposition (EBID)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Atomic force microscopy (AFM) is now a well-established technique for the surface characterization and imaging of a variety of materials. In AFM the accuracy of data is often limited by the tip geometry and the effect on ... -
A study of proper integrated circuit (IC) layout techniques for a parallel adder
(Universiti Malaysia Perlis (UniMAP)School of Microelectronic Engineering, 2011-06)This report presents the proper Integrated Circuit (IC) layout techniques for a parallel adder. The layout produced for this parallel adder is presented in this report. In order to design and to get a good layout, ... -
Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)This project is entitled as semi-recessed LOCOS for CMOS device isolation. Local oxidation (LOCOS) technique is a widely used method for device isolation in semiconductor process integration. It is a simple, cheap yet and ... -
Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)The principal focus of this project is dry etching technique by using the Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). An (ICP) system was chosen because of its high plasma density and low cost relative to ... -
The study of the effect of MOS transistor scaling on the critical device parameters
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ... -
Study of the temperature effect on thickness and surface roughness of SiO2
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this ... -
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed. Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information ... -
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control ... -
A Study on Surface Roughness and Morphology of Galliumoxide Doped Ba0.5Sr0.5TiO3 Thin Film
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-05)Thin films of perovskite BaxSr1−xTiO3 system are promising candidates for microelectronic devices that can be integrated to semiconductor circuits. The leadfree solid solution BaxSr1−xTiO3 (BST) is a high permittivity ... -
The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. In this project, ... -
Study the basic Infrared TX-RX circuit design for robot
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)The usage of infrared waves nowadays is widely used and it develops very fast. The characteristic of the infrared waves cause a lot of consumer creates many type of application for human usage. Many kind of technology and ... -
Study the effect of bird’s beak on Fully Recessed LOCOS and Poly Buffered LOCOS using 2 different pad Oxide
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Device isolation is one of the most important technology features towards the realization of very large scale CMOS device integration. Since the early days of semiconductor industry, LOCOS isolation has been the major ... -
Study the effect of environmental noise on Infrared TX–RX Circuit Signals
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Infrared wireless communications systems have been massively growing in the past few years. There has been a high priority needs include systems for small group communications, portable receivers, and portable transmitters. ...