Browsing by Subject "Semiconductors"
Now showing items 1-20 of 34
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Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ... -
Analytical Approach Assisted Simulation Study of Si, SiGe, and InP based Bipolar Junction Transistors
(Universiti Malaysia Perlis (UniMAP), 2019-04)This paper presents a comparative study of Si, SiGe and InP based Bipolar Junction Transistors (BJT) with reference to their DC, AC, and RF characteristics. Double diffusion doping profile in each case is used to determine ... -
The application of Nitride semiconductor materials
(Kolej Universiti Kejuruteraan Utara Malaysia, 2004-12) -
Correlation between the tonicity and the polarity in semiconductors
(Universiti Malaysia Perlis, 2007)Using the polarity with respect to energy gap Egrx, an empirical formula of tonicity factor is obtained for a specific class of semiconductors. The computation of tonicity character is distinguished with high degree of ... -
Degradation of single layer MEH-PPV organic light emitting diode (OLED)
(Institute of Electrical and Electronics Engineering (IEEE), 2006)The degradation process of a single layer electroluminescence (EL) polymer MEH-PPV organic light emitting diode (OLED) with the MEH-PPV thickness of 57plusmn3 nm is discussed. Typical structure of OLED fabrication is ... -
Density of electronic states and dispersion of optical functions of defect chalcopyrite CdGa2X4 (X = S, Se): DFT study
(Elsevier Limited, 2013)A density functional theory (DFT) based on full potential linear augmented plane wave (FPLAPW) was used for calculating the electronic structure, charge density and optical properties of CdGa2X4 (X = S, Se) compounds. Local ... -
Design and analysis of Floating Point divider
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)As the advances of VLSI technology, low power design has become an important topic in VLSI design. Scaling down supply voltage is an effective way for power reduction because of its quadratic relationship to dynamic power. ... -
Design and process development of silicon nanowire based DNA biosensor using electron beam lithography
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)Silicon nanowires (SiNWs) have their unique feature such as similar diameters to biomolecules, chemically tailorable physical properties, enable to apply in biomolecule detection and can be fabricated as a high performance ... -
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic ... -
Developing incremental capacity during seasonal demand for technologies beyond 90 NM in semiconductor fabrication industry
(Universiti Malaysia Perlis (UniMAP)Institute of Nano Electronic Engineering, 2015)This research is to develop a new approach to accelerate capacity increment from unexpected additional demand at semiconductor fabrication by 10%. The issue is from unpredictable demand at short notice to increase capacity ... -
DFT calculation of the electronic and optical properties of Ag 2PdO2 from X-ray and neutron crystallographic data
(Elsevier B.V., 2013)Electronic and optical properties of ternary silver palladium oxide (Ag2PdO2) are investigated using density functional theory. Two different possible approximations for the exchange correlation potentials were employed. ... -
Effect of different dielectric materials for Ultrathin Oxide
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) ... -
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)This project is about the usage of Technology Computer Aided Design (TCAD) in order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer simulation as process modelling and device operation. ... -
Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by TSUPREM-4 simulator and electrical characteristics extraction will ... -
Fabrication and characterization of Barium Strontium Titanate (BA1-XSRXTIO3 BST) for heat sensor application
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Ferroelectric Barium Strontium Titanate (BST) thin films were successfully prepared by wet chemical deposition or sol-gel method and characterized using SPA, AFM, and sensing properties. The BST thin film was fabricated ... -
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ... -
Fabrication and simulation of PNP Bipolar transistor based on Spin On Dopant technique and Electrical characterization
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)In this project, the fabrication and simulation of pnp transistor was performed. From fabrication process, the electrical characteristic and sheet resistance of the device was observed by 4 point probe measurement. The ... -
Floating point multiplication unit using FPGA
(Universiti Malaysia PerlisSchool of Computer and Communication Engineering, 2008-04)Field-programmable Gate Array (FPGA) is a semiconductor device containing programmable logic components called "logic blocks", and programmable interconnects. Logic blocks can be programmed to perform the function of basic ... -
Improvement of SiGe HBT Design and Technology Performance using Device Simulation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Simulation of the effect of various design parameters on the performance of the HBT is essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. ... -
The influence of the accelerating voltages on the growth of the square structure during Electron Beam Induced Deposition (EBID) method
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Electron beam induced deposition (EBID) is a method for high-resolution direct material deposition from the gas phase in the Scanning Electron Microscopy (SEM) onto a substrate. In this project, EBID method has been used ...