| dc.contributor.author | Riyaz Ahmad, Mohamed Ali | |
| dc.contributor.author | Ahmad Nasrull, Mohamed | |
| dc.contributor.author | Nafarizal, Nayan | |
| dc.date.accessioned | 2010-08-13T06:45:37Z | |
| dc.date.available | 2010-08-13T06:45:37Z | |
| dc.date.issued | 2009-06-20 | |
| dc.identifier.citation | p.26-30 | en_US |
| dc.identifier.uri | http://dspace.unimap.edu.my/123456789/8658 | |
| dc.description | Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on
June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia. | en_US |
| dc.description.abstract | The morphology evolution of
aluminum (Al) thin film in the present of Nitrogen
(N2) gas has been studied. The Al thin film has
been fabricated on silicon (Si) substrate using
aluminum evaporation system. Then, the substrate
were placed inside the furnace with the present of
N2 gas for approximately 30 minutes at certain
temperature range from room temperature to 700
ºC. The influence of the N2 gas to the Al thin film
in furnace were characterized by optical
microscope, Scanning Electron Microscope
(SEM), Energy Dispersive Spectrometer (EDS), I
– V characterization and X- ray diffraction
(XRD). It is found that, at above 600 ºC, we
observed that the colour of Al thin film was
changed drastically. We expect that this is because
of the formation of AlN on the Si substrate. This
statement is proved by the XRD and EDS
characterization results. From the SEM images,
we also found that the morphology of Al thin film
changed drastically for the temperature above 600
ºC. In addition, the resistivity, which was
evaluated from I – V characterization results, of
the thin film decreased after the thermal process
with N2 gas. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Pahang | en_US |
| dc.relation.ispartofseries | Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 | en_US |
| dc.subject | Aluminum thin film | en_US |
| dc.subject | Aluminum Nitride | en_US |
| dc.subject | Nitrogen Gas Furnace, | en_US |
| dc.subject | Scanning Electron Microscope (SEM) | en_US |
| dc.subject | X- ray diffraction (XRD) | en_US |
| dc.subject | Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) | en_US |
| dc.title | Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas | en_US |
| dc.type | Working Paper | en_US |
