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dc.contributor.authorMasoud, Farahani
dc.contributor.authorMona, Moradi
dc.date.accessioned2018-12-08T08:13:41Z
dc.date.available2018-12-08T08:13:41Z
dc.date.issued2018-07
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.11(3), 2018, pages 321-332en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/57588
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractThis paper presents two novel full adder cells based on Carbon Nanotube Field Effect Transistor (CNTFET) technology. According to unique specifications of CNTFET, and its similarity to conventional MOSFET technology, CNTFET technology is considered as a good successor for conventional MOSFET technology in nano-electronic in near future. The full adder cells benefit from less power consumption, delay time and occupied area comparing to peer designs. All CNTFET presented and previous designs have been carried out using Synopsys HSPICE in a realistic test bench and other various strict conditions in 32 nm technology. The Simulation results show that presented adders perform better comparing the previous designs.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectCarbon Nanotube Field Effect Transistor (CNTFET) Technologyen_US
dc.subjectCNTFETen_US
dc.subjectFull Adderen_US
dc.subjectHigh-Speeden_US
dc.subjectHigh-Frequencyen_US
dc.subjectNanoelectronicsen_US
dc.titleTwo Low Power and High Efficient Full Adder Cells Based on CNTFET Technologyen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my
dc.contributor.urlmo.moradi@riau.ac.iren_US


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