dc.contributor.author | H. Abud, Saleh | |
dc.contributor.author | Hassan, Z. | |
dc.contributor.author | Yam, F. K. | |
dc.date.accessioned | 2016-04-22T08:01:35Z | |
dc.date.available | 2016-04-22T08:01:35Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.8 (1), 2015, pages 33-38 | en_US |
dc.identifier.issn | 1985-5761 (Printed) | |
dc.identifier.issn | 1997-4434 (Online) | |
dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41313 | |
dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my/ | en_US |
dc.description.abstract | In this study, nanoporous structures on In₀.₀₈Ga₀.₉₂N/AlN/Si thin films with a thickness of 1 μm were synthesized by photoelectrochemical etching technique at various etching durations. The structural and optical properties of the pre- and post-etched thin films were investigated. The field emission scanning electron microscope images and X-Ray diffraction measurements revealed that the films pre-etched thin film has a sufficiently smooth surface over a large region with wurtzite structure. The roughness increased with an increase in etching duration. The photoluminescence emission peaks had a blue shift phenomenon for the post-etched films at room temperature, compared with the pre-etched film. The photoluminescence intensities of porous InGaN structures were enhanced when the nanoporous structure was formed. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universiti Malaysia Perlis | en_US |
dc.subject | Porous InGaN | en_US |
dc.subject | III-nitride | en_US |
dc.subject | HR-XRD | en_US |
dc.subject | Photoluminescence | en_US |
dc.title | Physical properties of porous In₀.₀₈Ga₀.₉₂N | en_US |
dc.type | Article | en_US |
dc.contributor.url | salehhasson71@gmail.com | en_US |
dc.contributor.url | zai@usm.my | en_US |
dc.contributor.url | yamfk@yahoo.com | en_US |