Design & simulation of silicon-based magnetic sensor
Abstract
In this thesis, the design and simulation of Silicon-Based Magnetic sensor is
discussed. The transistor can be converting into a magnetic sensor by splitting drain
structure of the conventional MOS transistor into two symmetrical parts. This work
focused a research of new simple and compact model of split-drain MOSFET structures
including geometrical effect of the devices and biasing dependency on the sensitivity.
The key parameter is the Hall Effect, which indicates the current line deviation due to
Lorentz force acting on the charge carriers. The magnetic sensor structures has been
designed and simulated by using TCAD software, MEDICI and DAVINCI which aimed
to identify an optimized design of magnetic sensor. The results of the study are
presented in this work.