| dc.contributor.author | Ghassan E., Arif | |
| dc.contributor.author | Farah Aini, Abdullah, Dr. | |
| dc.contributor.author | Yarub, Al-Douri, Assoc. Prof. Dr. | |
| dc.date.accessioned | 2014-03-06T04:09:31Z | |
| dc.date.available | 2014-03-06T04:09:31Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Procedia Engineering, vol. 53, 2013, pages 707-709 | en_US |
| dc.identifier.issn | 1877-7058 | |
| dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S1877705813002117 | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/dspace/handle/123456789/32387 | |
| dc.description | Link to publisher's homepage at http://www.elsevier.com/ | en_US |
| dc.description.abstract | Bulk modulus of hexagonal structure semiconductors are calculated by using density functional theory (DFT) of full-potential linear augmented plane wave (FP-LAPW) within general gradient approximation (GGA). In this work, a new mathematical model based on analytical expression and differential equation is established. Our calculated values are in accordance with the experimental one. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier B.V. | en_US |
| dc.subject | Structure semiconductors | en_US |
| dc.subject | Mathematical model | en_US |
| dc.subject | Density functional theory (DFT) | en_US |
| dc.title | Modeling of structural properties of hexagonal semiconductors | en_US |
| dc.type | Article | en_US |
| dc.contributor.url | ghasanarif@yahoo.com | en_US |
| dc.contributor.url | farahaini@usm.my | en_US |
| dc.contributor.url | yarub@unimap.edu.my | en_US |
