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Now showing items 21-30 of 48
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)
The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ...
An estimation of the energy and exergy efficiencies for the energy resources consumption in the transportation sector in Malaysia
(Elsevier Ltd., 2007-08)
The purpose of this work is to apply the useful energy and exergy analysis models for different modes of transport in Malaysia and to compare the result with a few countries. In this paper, energy and exergy efficiencies ...
High-sensitivity pressure sensor using a polymer-embedded FBG
(Wiley Periodicals, Inc., 2008-01)
A new pressure sensor based on fiber Bragg gratings (FBG), is described with high-pressure sensitivity. The sensor is configured by embedding the FBG in a polymer-field aluminum casing with an opening on one side, which ...
Design and fabrication of Microfluidic devices: MOSFET & Capacitor
(Institute of Electrical and Electronics Engineers (IEEE), 2006)
Microfluidic devices, based on silicon, are fabricated by photolithography, wet chemical etching with focus on an liquid conduction channel n-channel depletion MOSFET and a silica-liquid dielectric capacitor. Masks for ...
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD
(Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...
The characterization of power supply noise for optical mouse sensor
(Institute of Electrical and Electronics Engineering (IEEE), 2006)
The induced power supply noise (sinusoidal waveform) that injected to Vdd pin will cause unwanted spike at the positive amplitude and negative amplitude to the DC input voltage. At certain limit this spike will cause the ...
A 1.5 V, 0.85-13.35 GHZ MMIC low noise amplifier design using optimization technique
(Institution of Electronics and Telecommunication Engineers (IETE), 2009-11-01)
This paper describes how a broadband, 1.5 V, 0.85-13.35 GHz low noise amplifier in 0.15 μm 85 GHz PHEMT process is synthesized to simultaneously meet multiple design specifications such as bandwidth, noise figure, power ...
Characterization of robust alignment mark to improve alignment performance
(Institute of Electrical and Electronics Engineering (IEEE), 2006)
Overlay requirement is one of the biggest obstacles in achieving a very small feature. With the continued growth of small feature size, overlay requirement becomes tighter. Such a tight requirement requires a very high ...
Dual frequency integrated antenna (DFIA) with image rejection
(Institute of Electrical and Electronics Engineers (IEEE), 2005)
A new configuration of integrated antenna featuring dual frequency operations and image frequency rejection is implemented. The used of dual frequency for image rejection in one system by using one antenna is a new technique ...
Characterization of intermetallic growth of gold ball bonds on aluminum bond pads
(University of Malaya, 2008)
In this paper the intermetallic growth between gold ball bond and aluminum bond pad are studied. It involves thermal aging at 150 °C and 200 °C for various time intervals. The relationship between electrical resistance and ...