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Now showing items 11-20 of 48
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)
Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication
(Springer New York, 2007-12)
We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ...
Electronic properties of orthorhombic LiGaS2 and LiGaSe 2
(Springer Berlin/Heidelberg, 2009)
We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS2 (LGS) and LiGaSe2 (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) ...
A voltage reference circuit for current source of RFIC blocks
(Emerald Group Publishing Limited, 2008)
Purpose - The purpose of this paper is to design a voltage reference circuit for current source of radio frequency integrated circuit blocks. The voltage reference circuit is called voltage for current source (VCS). ...
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)
Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)
In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...
Borophosphosilicate glass (BPSG) reflow characterization for submicron CMOS technology
(Universiti Kebangsaan Malaysia, 2007)
This paper involves the planarization of borophosphosilicate glass (BPSG) film using a new recipe for annealing process to improve the borophosphosilicate glass (BPSG) film flatness after reflow. This improvement is for ...
Monitoring System for uninterruptible power supply
(Science Publications, 2007)
In industrial process today, reliability of equipment is very important. Power supply must be able to cater the need of industrial process. In case of power failure, backup power supply system must be able to support the ...
Optical investigations using ultra-soft pseudopotential calculations of Si0.5Ge0.5 alloy
(Elsevier Ltd, 2008-12)
Ultra-soft pseudopotential (US-PP) calculations with a powerful package called VASP (Vienna ab initio simulation package) are used. The total density of state and the energy gap of Si0.5Ge0.5 alloy of zinc-blende structure ...
FP-APW + lo calculations of the elastic properties in zinc-blende III-P compounds under pressure effects
(Elsevier B.V., 2009-04)
The effect of high-pressures on the structural and elastic properties of XP zinc-blende compounds, with X = B, Al, Ga and In, has been investigated using the full-potential augmented plane wave plus local orbitals method ...