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Uninterruptible power supply monitoring system with Visual Basic
(Universiti Malaysia Perlis, 2006-12-29)
In industrial process today, reliability of equipment is very important. Power supply must be able to cater the need of industrial process. In case of power failure, backup power supply system must be able to support the ...
The surface characteristics of under bump metallurgy (UBM) in electroless nickel immersion gold (ENIG) deposition
(Elsevier Science, 2006)
This paper discusses on the surface characteristics of each of the seven set-up process steps prior completion of under bump metallurgy (UBM) deposition. The Atomic Force Microscopy (AFM) and Scanning Electron Microscopy ...
The effects of multiple zincation process on Aluminum Bond Pad surface for Electroless Nickel Immersion Gold deposition
(American Society of Mechanical Engineers (ASME), 2006-09)
This paper reports the effects of a multiple zincation processon the Al bond pad surface prior to electroless nickel immersion gold deposition. The study of multiple zincation comprises the surface topogtaphy and morphology ...
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)
Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)
In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...
Design and fabrication of Microfluidic devices: MOSFET & Capacitor
(Institute of Electrical and Electronics Engineers (IEEE), 2006)
Microfluidic devices, based on silicon, are fabricated by photolithography, wet chemical etching with focus on an liquid conduction channel n-channel depletion MOSFET and a silica-liquid dielectric capacitor. Masks for ...
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD
(Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...
The characterization of power supply noise for optical mouse sensor
(Institute of Electrical and Electronics Engineering (IEEE), 2006)
The induced power supply noise (sinusoidal waveform) that injected to Vdd pin will cause unwanted spike at the positive amplitude and negative amplitude to the DC input voltage. At certain limit this spike will cause the ...
Characterization of robust alignment mark to improve alignment performance
(Institute of Electrical and Electronics Engineering (IEEE), 2006)
Overlay requirement is one of the biggest obstacles in achieving a very small feature. With the continued growth of small feature size, overlay requirement becomes tighter. Such a tight requirement requires a very high ...
Characteristics of Serial Peripheral Interfaces (SPI) timing parameters for optical mouse sensor
(Institute of Electrical and Electronics Engineering (IEEE), 2006)
In this paper we report the characterizations results of Serial Peripheral Interface (SPI) timing parameters for optical mouse sensor. SPI is an interface that facilitates the transfer of synchronous serial data. It supports ...