Now showing items 1-2 of 2

    • Effect of alignment mark architecture on alignment signal behavior in advanced lithography 

      Normah, Ahmad; Uda, Hashim; Mohd Jeffery, Manaf; Kader Ibrahim, Abdul Wahab (Universiti Malaya, 2007)
      Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is ...
    • Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD 

      Arsyad, F. S.; Subagio, A.; Sutanto, H.; Arifin, P.; Budiman, M.; Barmawi, M.; Husien, I.; Zul Azhar, Zahid Jamal (Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
      Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...