Browsing School of Microelectronic Engineering (Articles) by Subject "BST thin films"
Now showing items 1-2 of 2
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Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor
(Elsevier Ltd., 2011-08)Perovskite ferroelectric BaxSr1-xTiO 3 (x = 0.5, 0.6, 0.7 and 0.8) thin films have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) configurations using a sol-gel technique. The C-V characteristics for ... -
Impedance/modulus analysis of sol-gel BaxSr1-xTiO3 thin films
(Korean Physical Society, 2010-12)Perovskite-structure-type sol-gel barium-strontium-titanate (BST) thin films with molar formula BaxSr1-xTiO3 (x = 0.5, 0.6, 0.7, and 0.8) have been successfully fabricated as Al/BST/Pt capacitors. In order to study the ...