Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "HEMT"
Now showing items 1-2 of 2
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Comparative simulation of DC and AC performances of Al0.26Ga0.74N/GaN HEMT with BGaN Back Barrier
(Universiti Malaysia Perlis (UniMAP), 2021-01)This paper discusses the influence of BGaN layer on the structure of Al0.26Ga0.74N/ B0.02Ga0.98N /GaN HEMT with T- Gate. The use of BGaN back barrier on this device enhances confinement of the electron in the device. We ... -
DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
(Universiti Malaysia Perlis (UniMAP), 2017)The DC and RF performance of 30nm gate length enhancement mode (E-mode)AlGaN/AlN/GaN High electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have investigated using Synopsys ...