Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "GGA"

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    • Effect of Al doping on Band Gap of hexagonal cross section SiNWs 

      Kausar, Sana; Joshi, Shirish; Srivastava, Anurag (Universiti Malaysia Perlis, 2014)
      In this work band structure of hydrogen-passivated, free-standing silicon nanowires, oriented along [111] direction with hexagonal cross section was studied by using density functional theory using GGA approximation. Effect ...

    • Electronic and Optical Properties of Ramsdellite TiO2through mBJPotential 

      Sayah, Jamal; El Farh, Larbi; El Kouch, Hamza; Challioui, Allal (Universiti Malaysia Perlis (UniMAP), 2018-01)
      The aim of this work is to study the electronic and optical properties of ramsdellite titanium dioxide (TiO2), using the first principle calculations with modified Becke‐ Johnson (mBJ) exchange potential. By comparison ...