K, Karami; S., Taking; A., Ofiare; A., Dhongde; A., Al-Khalidi; E., Wasige (Universiti Malaysia Perlis (UniMAP), 2021-12)
In this work, we report on the processing and device characteristics of n++ GaN/AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs). The AlN/GaN structure is capped with a highly doped n++ GaN ...