Now showing items 1-3 of 3

    • RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs 

      Mohd Khairuddin, Md Arshad, Dr.; Mostafa, Emam; Kilchytska, Valeria I., Dr.; Andrieu, François, Dr.; Flandre, Denis, Prof.; Raskin, Jean-Pierre P., Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
      RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency f T and maximum oscillation frequency f max of 160 ...
    • A silicon-oxide-silicon vertically separated electrode nanogap device structure 

      Noor, N. H. M.; Uda, Hashim, Prof. Dr.; Muhamad Emi Azry, Shohini; Nuri, A. M. M. (American Institute of Physics, 2009-06-01)
      In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different ...
    • Tan delta and capacitance characteristics of underground XLPE cables – 11 kV 

      Asmarashid, Ponniran; Nor Akmal, Mohd. Jamail; Nor Anija, Jalaludin (Universiti Malaysia Pahang, 2009-06-20)
      There are several appropriate techniques can be used in order to show the characteristics of aged and unaged underground XLPE cables after sometime in service. From the characteristics, performance of the cables can ...