Browsing School of Microelectronic Engineering (FYP) by Subject "Metal oxide semiconductors -- Mathematical models"
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Simulation on Effects of Different Types of Channel/Drain Engineering Structure on MOS Device Performance
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)This final year project is aimed to analyze the effects of three different types of channel/drain engineering structure on MOS transistor performance. As a project basis, a 0.35μm process recipe from UC Berkeley is used ... -
The study of the effect of MOS transistor scaling on the critical device parameters
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ...