| dc.contributor.author | Uda, Hashim, Prof. Dr. | |
| dc.contributor.author | Kasim, Abdul Rahman | |
| dc.contributor.author | Hakim | |
| dc.contributor.author | Mohd Azri, Othman | |
| dc.date.accessioned | 2010-08-18T01:49:31Z | |
| dc.date.available | 2010-08-18T01:49:31Z | |
| dc.date.issued | 2009-06-01 | |
| dc.identifier.citation | Vol.1136, 2009, p. 253-258 | en_US |
| dc.identifier.issn | 0094-243X | |
| dc.identifier.uri | http://link.aip.org/link/?APCPCS/1136/253/1 | |
| dc.identifier.uri | http://dspace.unimap.edu.my/123456789/8795 | |
| dc.description | Link to publisher's homepage at http://www.aip.org/ | en_US |
| dc.description.abstract | In this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from 200°C to 400°C in 50°C steps, using a capacitive coupled magnetron cathode with 13.65 MHz that at higher magnetron power. After all investigations, it was concluded that 300°C substrate temperature is suitable for producing CdS films on silicon wafer with RF magnetron sputtering and the examined properties (good crystallinity and low resistivity) of this film show its feasibility for technological purposes, especially for light sensor cells. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics | en_US |
| dc.relation.ispartofseries | Proceedings of the International Conference on Nanoscience and Nanotechnology 2008 | en_US |
| dc.subject | Cadmium sulphide (CdS) | en_US |
| dc.subject | Resistivity | en_US |
| dc.subject | RF magnetron sputtering | en_US |
| dc.subject | X-ray diffraction | en_US |
| dc.subject | Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) | en_US |
| dc.title | CdS film thickness characterization by R.F. magnetron sputtering | en_US |
| dc.type | Working Paper | en_US |
