Now showing items 1-8 of 8

    • Alternative-current electrochemical etching of uniform porous silicon for photodetector applications 

      Husnen R., Abd; Yarub, Al-Douri, Assoc. Prof. Dr.; Naser Mahmoud, Ahmed, Dr.; Uda, Hashim, Prof. Dr. (Electrochemical Science Group, 2013)
      The twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon (PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different current densities; ...
    • Characteristics of nanostructure silicon photodiode using laser assisted etching 

      Naser Mahmoud, Ahmed, Dr.; Yarub, Al-Douri, Assoc. Prof. Dr.; Alwan, M. Alwan; Ghassan Ezzulddin, Arif; Allaa A., Jabbar (Elsevier B.V., 2013)
      We prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30 mA/cm2) with different etching wavelengths of laser diode (532, 650 and 810 nm), a (metal/nanostructure ...
    • Influence of current density on porous silicon characteristics 

      Husnen R., Abd; Naser Mahmoud, Ahmed, Dr.; Yarub, Al-Douri, Assoc. Prof. Dr.; Uda, Hashim, Prof. Dr. (Trans Tech Publications, 2013)
      Porous silicon structures have been fabricated by electrochemical etching using different current density. From field emission scanning electron microscope images (FE-SEM) it was observed that more uniform distribution of ...
    • A Novel AC technique for high quality porous GaN 

      Ainorkhilah, Mahmood; Naser Mahmoud, Ahmed, Dr.; Yuhamdan, Yusof; Yam, Fong Kwong, Dr.; Chuah, Lee Siang, Dr.; Husnen R., Abd; Zainuriah, Hassan (Electrochemical Science Group (ESG), 2013-04)
      In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent ...
    • Structural and morphological studies of cadmium sulfide nanostructures 

      Abdulwahab, S. Z. Lahewil; Yarub, Al-Douri, Assoc. Prof. Dr.; Uda, Hashim, Prof. Dr.; Naser Mahmoud, Ahmed, Dr. (Trans Tech Publications, 2013)
      Cadmium sulfide (CdS) nanostructures were prepared with different spin coating speed 1000 and 3000 rpm and molarities of Cd:S to be 1.2 to 0.01 mol/L using sol-gel spin coating technique. It is found that the average grain ...
    • Structural and optical investigations of cadmium sulfide nanostructures for optoelectronic applications 

      Abdulwahab, S.Z. Lahewil; Yarub, Al-Douri, Assoc. Prof. Dr.; Uda, Hashim, Prof. Dr.; Naser Mahmoud, Ahmed, Dr. (Elsevier Ltd., 2012-11)
      Cadmium sulfide (CdS) nanostructures were deposited on glass substrates by sol–gel spin coating technique. X-Ray Diffraction (XRD) results have indicated that the formation of CdS has hexagonal structure. The lattice constants ...
    • Structural and optical properties of PbI2 nanostructures obtained using the thermal evaporation method 

      Safaa I. Mohammed; Yarub, Al-Douri, Assoc. Prof. Dr.; Uda, Hashim, Prof. Dr.; Naser Mahmoud, Ahmed, Dr.; R., Al-Gaashani (NRC Research Press, 2013-10)
      Lead iodide (PbI2) nanostructures were successfully prepared using the thermal evaporation method on a glass substrate at room temperature. The structural properties were analyzed using X-ray diffraction, which revealed ...
    • Structural, analysis and optical studies of cadmium sulfide nanostructured 

      Abdulwahab, S. Z. Lahewil; Yarub, Al-Douri, Assoc. Prof. Dr.; Uda, Hashim, Prof. Dr.; Naser Mahmoud, Ahmed, Dr. (Elsevier Ltd., 2013)
      Cadmium sulfide (CdS) thin films of nanostructure were prepared and deposited on glass substrates with Cd:S (1.2 to 0.05 mol/L) annealed at 400ºC and different spin coating speed (1000 and 5000 rpm) using sol-gel spin ...