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dc.contributor.authorMarlia, Morsin
dc.contributor.authorNur Hamidah, Abdul Halim
dc.contributor.authorUda, Hashim
dc.contributor.authorHashim, Saim
dc.date.accessioned2009-09-03T03:18:57Z
dc.date.available2009-09-03T03:18:57Z
dc.date.issued2005-05-18
dc.identifier.citationp.91-95en_US
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/7134
dc.descriptionOrganized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar.en_US
dc.description.abstractThis paper presents the module development of inhouse MOS transistor device at KUKUM Micro Fabrication Cleanroom. The process started with the establishment of process flow, process modules, and process parameters. Four modules were developed and characterized prior to MOS transistor device fabrication namely dry and wet oxidation and etching, resist thickness and exposure dose optimization, n-type and p-type spin on dopant and diffusion also metal thickness characterization. The data were analyzed and applied in the fabrication of MOS transistor devices. Standard CMOS process was utilized in this experiment. The results for all the processes are present in this paper.en_US
dc.language.isoenen_US
dc.publisherKolej Universiti Kejuruteraan Utara Malaysiaen_US
dc.relation.ispartofseriesProceedings of the 1st National Conference on Electronic Designen_US
dc.subjectTransistors -- Design and constructionen_US
dc.subjectMOS transistoren_US
dc.subjectMetal oxide semiconductorsen_US
dc.subjectModule developmenten_US
dc.subjectUndergarduate moduleen_US
dc.subjectMicroelectronic engineeringen_US
dc.titleDevelopment of In-House MOS transistor at KUKUM Micro Fabrication Cleanroom: Microelectronic undergraduate activitiesen_US
dc.typeWorking Paperen_US


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