Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
Date
2009Author
Alwan, M. Alwan
Narges, Z. Abdulzahra
Naser Mahmoud, Ahmed
Halim, N.H.A.
Metadata
Show full item recordAbstract
The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO).