Show simple item record

dc.contributor.authorSharifah Norfaezah, Sabki
dc.contributor.authorM. D. R., Hashim
dc.date.accessioned2009-08-28T01:21:02Z
dc.date.available2009-08-28T01:21:02Z
dc.date.issued2005-05-18
dc.identifier.citationp.109-111en_US
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/7103
dc.descriptionOrganized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar.en_US
dc.description.abstractIon implantation and diffusion processes are very important in the fabrication of bipolar and CMOS transistors. High selectivity’s of ion implantation plays a very important role in forming active device region and low ohmic contact. While annealing process after ion implantation is needed to activate the dopant and repair the damage. However, the diffusion process is accompanied by an anomalous transient enhanced diffusion (TED) of dopant. In order to study the ion implantation and diffusion processes, a process simulation using SSUPREM4 module in ATHENA is the easiest way to be used. However to study and to model the TED, a correct modelling must be adopted. As the right method, the simulation had to start with the default model before any other model can be used. The model is conducted using SSUPREM4 module in the process simulator ATHENA in SILVACO.en_US
dc.language.isoenen_US
dc.publisherKolej Universiti Kejuruteraan Utara Malaysiaen_US
dc.relation.ispartofseriesProceedings of the 1st National Conference on Electronic Designen_US
dc.subjectIon implantationen_US
dc.subjectDiffusion processesen_US
dc.subjectCMOS transistorsen_US
dc.subjectTransient enhanced diffusion (TED)en_US
dc.titleSimulation using default model in ATHENA/SSUPREM4en_US
dc.typeWorking Paperen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record