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dc.contributor.authorUda Hashim
dc.contributor.authorChin Seng Fatt
dc.contributor.authorS. Sakrani
dc.date.accessioned2009-04-06T13:45:40Z
dc.date.available2009-04-06T13:45:40Z
dc.date.issued2009
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol. 2 (1), 2009, pages 1-10.en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/5339
dc.identifier.urihttp://ijneam.unimap.edu.my/en_US
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractTechnology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and devics operation. TCAD has two major functions namely process simulation and device simulation. It performs the semiconductor process simulation and the device simulation by taking the description of the transistor layout input to stimulate the fabrication process and device behavior before the actual silicon is made. this paper illustrates the use of Synopsys' Taurus TCAD to develop and stimulate the fabrication and electrical behavior of NMOS and PMOS transistors in the complete CMOS process flow. Illustration also include how mask information extracted from a layout by Taurus Layout is used by TSUPREM-4 to produce an output file containing complete structure, mesh and doping information that can be read into MEDICI device simulator to extract electrical characteristics. The specified process includes, not only steps required to stimulate a MOSFET device, but also all steps of the hypothetical CMOS process.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectEngineering design -- Data processingen_US
dc.subjectTechnology CAD (TCAD)en_US
dc.subjectComputer graphicsen_US
dc.subjectEngineering -- Data processingen_US
dc.subjectComputer-aided designen_US
dc.subjectDigital integrated circuits -- Design and constructionen_US
dc.subjectTaurus TCADen_US
dc.titleApplication of synopsys' taurus TCAD in developing CMOS fabrication process modulesen_US
dc.typeArticleen_US


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