| dc.contributor.author | Salem, Evan T. | |
| dc.contributor.author | Ismail, Raid A. | |
| dc.contributor.author | Fakhry, Makaram A. | |
| dc.contributor.author | Yusof, Yushamdan | |
| dc.date.accessioned | 2017-08-08T04:47:18Z | |
| dc.date.available | 2017-08-08T04:47:18Z | |
| dc.date.issued | 2016 | |
| dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.9 (2), 2016, pages 111-122 | en_US |
| dc.identifier.issn | 1985-5761 (Printed) | |
| dc.identifier.issn | 1997-4434 (Online) | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49270 | |
| dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my/ | en_US |
| dc.description.abstract | ZnO/Si heterostracture has been constructed on (111) oriented silicon substrate
using a pulsed Nd: YAG laser for the ablation of Zn target in the presence of oxygen as
reactive atmosphere in order to prepare ZnO TCO's films. Were the electrical properties of these films have been invested reaching to the optimum oxygen pressure at which the
device has been prepared. ZnO films, formed at 300 Torr oxygen ambient, showed an
electrical resistivity of 0.27 Ω.cm, without using post-deposition heat treatment. The
electrical properties of the preparation device have been carried out at different substrate
temperatures. Also the detector parameter has been measured | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis | en_US |
| dc.subject | TCO thin film | en_US |
| dc.subject | MIS device | en_US |
| dc.subject | PLD deposition | en_US |
| dc.subject | Electrical properties | en_US |
| dc.title | Reactive PLD of ZnO thin film for optoelectronic application | en_US |
| dc.type | Article | en_US |
