| dc.contributor.author | Muhammad Nazif, Mohd Borhan | |
| dc.date.accessioned | 2016-06-02T05:10:14Z | |
| dc.date.available | 2016-06-02T05:10:14Z | |
| dc.date.issued | 2015-07 | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41819 | |
| dc.description | Access is limited to UniMAP community. | en_US |
| dc.description.abstract | This paper concern with the design and simulation of RF amplifier using MESFET
[TIM 8596_4UL] at 8.1 GHz to 10 GHz within x-band frequency range. RF amplifier
designs rely on the terminal characteristics of the transistor as represented by Sparameter. S-parameter of transistor provides the necessary values to perform the
analysis such as stability, DC-biasing and available gain. Based on the S-parameter of
the transistor and certain performance requirements a systematic approach for the
designing of RF power amplifier is developed using ADS [Advanced Design System].
RF amplifier circuit designed and simulated in ADS which has better stability but low
magnitude of S21. By optimizing the DC-biasing circuit and using proper values of
passive components, dielectric constant were achieved better performance. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
| dc.subject | Power amplifier | en_US |
| dc.subject | Power amplifier -- Design and construction | en_US |
| dc.subject | RF amplifier | en_US |
| dc.subject | MESFET | en_US |
| dc.subject | Transistor | en_US |
| dc.title | Design and development of extended power amplifier specifically for X-band applications | en_US |
| dc.type | Learning Object | en_US |
| dc.contributor.advisor | Dr. Norsuhaida Ahmad | en_US |
| dc.publisher.department | School of Computer and Communication Engineering | en_US |
