| dc.contributor.author | Khanittha, I King | |
| dc.date.accessioned | 2016-05-30T08:29:25Z | |
| dc.date.available | 2016-05-30T08:29:25Z | |
| dc.date.issued | 2015-06 | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41765 | |
| dc.description | Access is limited to UniMAP community. | en_US |
| dc.description.abstract | In this thesis, a class AB power amplifier at industrial, scientific and medical
application (ISM) band has been design and simulated. This power amplifier is used for
a telecommunication system. Class AB amplifier is widely used in wireless
communication due to compromise between linearity and efficiency. A transistor that
has been chosen in this work is Pseudomorphic High Electron Mobility Transistor
(PHEMT), ATF36077 form Avago Technology. The simulation was carried out to
analyze the behavior of power amplifier in the 2.4 GHz ISM band. The biasing circuit,
input and output matching networks have been designed and simulated using Advanced
Design System (ADS) Simulator. The PCB of the proposed power amplifier circuit is
using a Rogers RT/Duroid 5880. The simulated result for class AB power amplifier
only produced output power of 34.356 dBm and the power added efficiency (PAE) of
56.757 %. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
| dc.subject | Power amplifier | en_US |
| dc.subject | Telecommunication system | en_US |
| dc.subject | Transistor | en_US |
| dc.subject | RF Amplifier | en_US |
| dc.title | Design power amplifier class AB at ISM band | en_US |
| dc.type | Learning Object | en_US |
| dc.contributor.advisor | Dr. Rosemizi Abd Rahim | en_US |
| dc.publisher.department | School of Computer and Communication Engineering | en_US |
