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Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer
(American Chemical Society, 2014-07)
Cl-doped ZnO-nanowire (Cl:ZnO-nws)/Cu2O photovoltaic devices were prepared by electrodeposition in aqueous solutions, and the effects of the insertion of the highly resistive ZnO (i-ZnO) layer has been demonstrated by an ...
Photon-assisted electrochemical construction of <0001>-n-ZnO/<111>-p-Cu2O photovoltaic devices with intermediate TiO2 layer
(The Electrochemical Society (ECS), 2014-10)
The <111>-Cu2O/<0001>-ZnO photovoltaic (PV) device has been constructed by a photon-assisted electrochemical reaction in aqueous solutions, and the effect of the insertion of the TiO2 layer prepared by a sol-gel technique ...
Substrate type 〈111〉-Cu2O/〈0001〉-ZnO photovoltaic device prepared by photo-assisted electrodeposition
(Elsevier B.V., 2015-10)
The substrate-type 〈0001〉ZnO/〈111〉Cu2O photovoltaic (PV) device has been constructed by electrodeposition of a 〈111〉-p-Cu2O layer on an Au(111)/Siwafer substrate followed by stacking the n-ZnO layer by electrodeposition ...