Now showing items 1-3 of 3

    • Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow; Wei Wei, Ng (Trans Tech Publications, 2014)
      This paper presents the interaction relationships between Tetrafluoromethane (CF₄) gas, Oxygen (O₂) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive ...
    • Main effects study on plasma etched aluminium metallization 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow (Trans Tech Publications, 2014-01)
      Main effects contributing to the quality of surface roughness on an etched aluminium metallization wafer using Reactive Ion Etching (RIE) was studied. A total of three controllable process variables, with eight sets of ...
    • Surface roughness analysis on reactive ion etched aluminium deposited wafer 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow (Trans Tech Publications, 2014)
      This paper investigates the factors that affect the surface roughness on an Aluminium deposited wafer after reactive ion etching (RIE) using a combination of Tetrafluoromethane (CF₄) and Oxygen (O₂) gaseous. A total of ...