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    • Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet 

      Mohd Khairuddin, Md Arshad, Dr.; Uda, Hashim, Prof. Dr.; Noraini, Othman (Universiti Malaysia Perlis (UniMAP)Institute of Nano Engineering Electronic, 2014-05)
      Fully-depletion operation is mandatory requirement for ultra-scaled devices (Le. < 45 nm technology) which only can be achieved either multi-gate (Le. FinFET) or thin body Silicon-on-Insulator (SOl). Thin body SOl offers ...