| dc.contributor.author | Ahmed, Naser M. | |
| dc.contributor.author | Yarub, Al-Douri, Assoc. Prof. Dr. | |
| dc.contributor.author | Alwan, Alwan M. | |
| dc.contributor.author | Jabbar, Allaa A. | |
| dc.contributor.author | Arif, Ghassan E. | |
| dc.date.accessioned | 2013-07-23T07:08:39Z | |
| dc.date.available | 2013-07-23T07:08:39Z | |
| dc.date.issued | 2012-11-20 | |
| dc.identifier.citation | p.157-161 | en_US |
| dc.identifier.uri | http://dspace.unimap.edu.my/123456789/26995 | |
| dc.description | Malaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012 organised by technical universities under the Malaysian Technical Universities Network (MTUN), 20th - 21st November 2012 at Hotel Seri Malaysia, Kangar, Perlis. | en_US |
| dc.description.abstract | We prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30 mA/cm2) with different etching wavelengths of laser diode (532,650 and 810 nm), a (metal/nanostructure silicon/metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes to improve the characterizations of PSi photodiode, A responsivity of (3A/w) was measured at (450 nm) with low value of dark current (1.33 μA/cm) and higher value of photo current (610 μA/cm2) at 5 volt reverse bias. The results show that the wavelength IR (810 nm) give us the best photodiode and electrical characteristics. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Malaysian Technical Universities Network (MTUN) | en_US |
| dc.subject | Nanostructures silicon photodiode (nPSi) | en_US |
| dc.subject | Photodiode | en_US |
| dc.title | Characteristics of nanostructure silicon photodiode using laser assisted etching | en_US |
| dc.type | Working Paper | en_US |
| dc.contributor.url | yarub@unimap.edu.my | en_US |
| dc.contributor.url | ghasanarif@yahoo.com | en_US |
