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Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)
The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ...
Characterization of intermetallic growth of gold ball bonds on aluminum bond pads
(University of Malaya, 2008)
In this paper the intermetallic growth between gold ball bond and aluminum bond pad are studied. It involves thermal aging at 150 °C and 200 °C for various time intervals. The relationship between electrical resistance and ...